Intel, Micron Extend NAND Flash Technology Leadership With Introduction of World’s First 128Gb NAND Device and Mass Production of 64Gb 20nm NAND

New 128Gb Device Ideal for Small Form Factor Tablets, Smartphones, SSDs and High-Performance Compute Devices

Intel Corporation and Micron Technology, Inc., (Nasdaq:MU) announced a new benchmark in NAND flash technology — the world’s first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND, which further extends the companies’ leadership in NAND process technology.

Developed through Intel and Micron’s joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s), providing customers with a more cost-effective solid-state storage solution for today’s slim, sleek product designs, including tablets, smartphones and highcapacity solid-state drives (SSDs.)

 

Intel Corporation


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